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| Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) IXTH/IXTT 10P50 IXTH/IXTT 11P50 -500 V -10 A 0.90 -500 V -11 A 0.75 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJ TC = 25C TC = 25C TC = 25C Maximum Ratings -500 -500 20 30 10P50 11P50 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -10 -11 30 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ W C C C C TO-247 AD (IXTH) D (TAB) TO-268 (IXTT) Case Style G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 (TO-247) 300 1.13/10 Nm/lb.in. 6 4 g g Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 100 TJ = 25C TJ = 125C -200 -1 -5.0 V %/K V %/K nA A mA VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 A BVDSS Temperature Coefficient V DS = VGS, ID = -250 A VGS(th) Temperature Coefficient V GS = 20 VDC, VDS = 0 V DS = 0.8 * VDSS V GS = 0 V V GS = -10 V, ID = 0.5 * ID25 10P50 11P50 RDS(on) Temperature Coefficient 0.90 0.75 0.6 %/K 94535F (7/02) (c) 2002 IXYS All rights reserved IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5 9 4700 V GS = 0 V, VDS = -25 V, f = 1 MHz 430 135 33 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 27 35 35 160 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 46 92 0.42 (TO-247) 0.25 S 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS V DS = -10 V; ID = ID25, pulse test pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -3 500 A A A A V ns TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, di/dt = 100 A/s Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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